Temperature-dependent photoluminescence properties of quaternary ZnAgInS quantum dots

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Temperature-dependent photoluminescence study of InP/ZnS quantum dots

This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is norm...

متن کامل

Ultraviolet photoluminescence of ZnO quantum dots sputtered at room-temperature.

We observe ultraviolet photoluminescence from sputtered ZnO quantum dots which are fabricated with no annealing steps. The nanocrystals are embedded in amorphous SiO2 and exhibit a narrow size distribution of 3.5 ± 0.6 nm. Photoluminescence and transmittance measurements show a shift of ultraviolet emission and absorption of the dots compared to bulk ZnO material. This work paves the way for ch...

متن کامل

Photoluminescence from low temperature grown InAs/GaAs quantum dots

• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...

متن کامل

Photoluminescence of silicon quantum dots in nanospheres.

Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while ...

متن کامل

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photol...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Optics Express

سال: 2016

ISSN: 1094-4087

DOI: 10.1364/oe.24.019506